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Catalytic Chemical Vapor Deposition (CTL-CVD) Method to Obtain High Quality Amorphous Silicon Alloys

Published online by Cambridge University Press:  26 February 2011

Hideki Matsujmura
Hideki Matsujmura*
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi-Hiroshima 724, JAPAN
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Abstract

A catalytic chemical vapor deposition (CTL-CVD) method, by which amorphous films are deposited at low temperatures only by using the catalytic or pyrolytic reactions but not by using plasma, is applied to produce amorphous silicon (a-Si) and a-Si alloys such as amorphous silicon germanium (a-SiGe), silicon carbide (a-Sic) and silicon nitride (a-SiNx). It is found that the CTL-CVD method is useful not only to produce a-Si but also to obtain high quality a-Si alloys. For instance, the photoconductivity of CTL-CVD a-SiGe of the optical band gap of 1.40 to 1.45 eV is 10−5 to 10−4 (Scm−1 ) for AM-1 of 100 mW/cm2 , keeping the photosensitivity over 104.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 43
Copyright
Copyright © Materials Research Society 1988

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References

1. Matsumura, H., Ihara, H. and Tachibana, H., Proc. of 18th IEEE Phoptovoltaic Specialists Conf. Las Vegas, 1985, p1277 Google Scholar
2. Matsmura, H., Jpn. J. Appl. Phys., 25, L949 (1986)Google Scholar
3. Matsumura, H., Mat. Res. Symp. Proc., 95, 261 (1987)CrossRefGoogle Scholar
4. Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y. and Tanaka, K., Jpn. J. Appl. Phys., 25, L54 (1986)Google Scholar
5. Roedern, B.V., Paul, D.K., Blake, J., Collins, R.W., Moddel, G. and Paul, W., Phys. Rev. B, 25, 7678 (1982)CrossRefGoogle Scholar
6. Catalano, A., Newton, J.L., Arya, R.R. and Wiedeman, S., Tech. Digest of Int. PVSEC-3, Tokyo, 1987, p61 Google Scholar
7. Watanabe, T., Tanaka, M., Azuma, K., Nakatani, M., Sonobe, T. and Shimada, T., Jpn. J. Appl. Phys., 25, L288 (1987)Google Scholar