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CBE Growth Characterization of GaAs and InGaAs by Rheed and RD

Published online by Cambridge University Press:  22 February 2011

G. Paulsson ,
B. Junno  and
L. Samuelson
G. Paulsson
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
B. Junno
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
L. Samuelson
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
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Abstract

Triethylgallium, trimethylindium and tertiarybutylarsine have been used to grow GaAs and InGaAs on (OO1)GaAs. No pre-cracking was used so that the thermal decomposition of tertiarybutylarsine on GaAs could be studied. The growth has been monitored in-situ using reflection high-energy electron diffraction and reflectance-difference. A comparison ismade between the reflectance difference signal and the intensity of the reflection high-energy electron diffraction specular spot as the surface is transformed from As rich to Garich. Using the former technique similar growth transients have also been studied as a function of the temperature. It is found that the incorporation of small amounts of In (less than 5 per cent) in the buffer layer significantly improves the oscillatory behavior of the RD-signal when growth of GaAs is commenced. Finally, the growth dynamics of InGaAs isstudied using reflection high-energy electron diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 21
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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