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Changes in the Medium Range Order of α-Si:H Thin Films Observed by Variable Coherence Tem

Published online by Cambridge University Press:  10 February 2011

J. M. Gibson ,
M. M. J. Treacy ,
P. M. Voyles ,
J. R. Abelson  and
H.-C. Jin
J. M. Gibson
Affiliation:
Dept. of Physics, University of Illinois at Urbana-Champaign, 1110 W. Greet Street, Urbana, IL 61801
M. M. J. Treacy
Affiliation:
NEC Research Institute Inc., 4 Independence Way, Princeton, NJ 08540-6685
P. M. Voyles
Affiliation:
Dept. of Physics, University of Illinois at Urbana-Champaign, 1110 W. Greet Street, Urbana, IL 61801
J. R. Abelson
Affiliation:
Dept. of Materials Science and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1304 W. Green Street, Urbana, IL 61801
H.-C. Jin
Affiliation:
Dept. of Materials Science and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1304 W. Green Street, Urbana, IL 61801
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Abstract

We have investigated the structure of a-Si:H thin films using variable coherence transmission electron microscopy. Variable coherence is a new microscopy technique that is sensitive to higher-order atomic position correlations. We observe changes in the structure of α-Si:H with increasing hydrogen content and with light soaking. Based on these observations we conclude that a less ordered form of α-Si:H is more structurally stable than a more ordered form. This may have implications for understanding the Staebler-Wronski effect.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 837
Copyright
Copyright © Materials Research Society 1998

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References

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