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Characteristics of XeCl Excimer-Laser Annealed Insulator

Published online by Cambridge University Press:  10 February 2011

Keun-Ho Jang ,
Hong-Seok Choi ,
Jae-Hong Jun ,
Jhun-Suk Yoo  and
Minkoo Han
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jae-Hong Jun
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jhun-Suk Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Minkoo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (AI/TEOS/n+ Silicon ) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased upto the 170 mJ/cm2 with increasing laser energy density and decreased at 220 mJ/cm2. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 105
Copyright
Copyright © Materials Research Society 1996

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References

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