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Characterization of a‐SiNx Thin Film Deposited By Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Sang‐Soo Han ,
Byung‐Hyuk Jun ,
Kwangsoo No  and
Byeong‐Soo Bae
Sang‐Soo Han
Affiliation:
Laborotary of Optical Materials & Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Taejon, 305–701, Korea
Byung‐Hyuk Jun
Affiliation:
Laborotary of Optical Materials & Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Taejon, 305–701, Korea
Kwangsoo No
Affiliation:
Laborotary of Optical Materials & Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Taejon, 305–701, Korea
Byeong‐Soo Bae
Affiliation:
Laborotary of Optical Materials & Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Taejon, 305–701, Korea
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Abstract

Silicon nitride thin films are deposited at low temperature using the inductively coupled plasma enhanced chemical vapor deposition.(ICP‐CVD) N2 and SiH4 gases are used as reactant gases for deposition of silicon nitride thin films with low hydrogen content. Composition, refractive index, and hydrogen content of the films were examined with variation of N2 flow rate, RF power and substrate temperature. As N2 flow rate and RF power increase and substrate temperature is lowered, N/Si ratio is reduced producing higher refractive index of the film. Hydrogen content of the films is calculated by FTIR spectroscopy and is much less than those of the films deposited by conventional PECVD using SiH4/N2 gases since N2 gas is used instead of NH3 gas. Total hydrogen content is constant regardless of RF Power and N2 flow rate. However, the hydrogen content decreases with increasing substrate temperature due to the release of hydrogen at high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 139
Copyright
Copyright © Materials Research Society 1997

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References

1 Maeda, M., Nakamura, H., J. Appl. Phys. 58, 484 (1985).Google Scholar
2 Chow, R., Ranford, W.A., Wang, K., Rosier, R. S., J. Appl. Phys. 53, 5630 (1982).Google Scholar
3 Smirnova, T. P., Belyi, V. I. and Chramova, L. V., Thin Solid Films 74, 287 (1980).Google Scholar
4 Rocheleau, R. E. and Zhang, Z., Thin Solid Films 220, 73 (1992).Google Scholar
5 Gupta, M., Rathi, V. K., Thangaraji, R. and Agihotri, O. P., Thin Solid films 204, 77 (1991).Google Scholar
6 Yoon, J. S., Deshpandey, C. V. and Bunshah, R. F., Thin Solid Films 220, 80 (1992).Google Scholar
7 Kyuragi, H. and Urisu, T., J. Electrochem. Soc. 138, 3412 (1991).Google Scholar
8 Willard, H. H., Merritt., L. L. Jr., Dean, J. A., Settle., F. A. Jr., Instrumental Methods of Analysis. 7th ed. (Wadsworth, California, 1988), p.287.Google Scholar
9 Dun, H., Pan, P., White, F. R. and Douse, R. W., J. Electrochem. Soc. : Solid‐state Science and Technology 128, 1555 (1981).Google Scholar
10 Lanford, W. A. and Land, M. J., J. Appl. Phys. 49, 2473 (1978).Google Scholar
11 Peercy, P. S., Stein, H. J., Doyle, B. L. and Picraux, S. T., J. Electron. Mater. 8, 11 (1979).Google Scholar
12 Zhang, X., Shi, G., Yang, A. and Shao, D., Thin Solid Films 215, 134 (1992).Google Scholar