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Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)

Published online by Cambridge University Press:  25 February 2011

Pawel Kaminski
Pawel Kaminski*
Affiliation:
Institute of Electronic Materials Technology, ul.Konstruktorska 6, 02-673 Warsaw, Poland
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Abstract

Deep states in semi-insulating (SI) materials :GaAs:Cr ,un-doped GaAs and InP:Fe are investigated by Photoinduced Transient Spectroscopy (PITS) .The relationship between the Hall mobility in undoped SI GaAs and occurrence of the EL2-related peak in the PITS spectrum is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 75
Copyright
Copyright © Materials Research Society 1990

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References

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