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Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

Published online by Cambridge University Press:  15 February 2011

D. W. Greve ,
R. Misra ,
R. Strong  and
T.E. Schlesinger
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
R. Misra
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
R. Strong
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
T.E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
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Abstract

Doped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 267
Copyright
Copyright © Materials Research Society 1994

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