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Characterization Of Grown-In Defects In CZ-SI Crystals By Bright Field IR Laser Interferometer

Published online by Cambridge University Press:  15 February 2011

Katsuhiko Nakai ,
Masami Hasebe ,
Toshio Iwasaki  and
Yasuo Tsumori
Katsuhiko Nakai
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Masami Hasebe
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Toshio Iwasaki
Affiliation:
Manufacturing Department, NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Yasuo Tsumori
Affiliation:
Manufacturing Department, NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
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Abstract

We have developed a quantitative measurement method for the number density, size and morphology of grown-in defects in czochralski-grown silicon (CZ-Si) crystals with a bright-field infrared-laser interferometer (known as Oxygen Precipitate Profiler; OPP). Using this method we investigated the effect of crystal cooling condition during crystal growth on the formation of grown-in defects by growth holding experiments. The relation between gate oxide integrity (GOI) and grown-in defects was studied. It was revealed that the grown-in defects have octahedral shape and degrade the GOI performance. We estimate the density as well as cumulative volume of the grown-in defects and discuss the formation mechanism of them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 113
Copyright
Copyright © Materials Research Society 1997

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References

1. Ryuta, J. et al. Jpn. J. Appl. Phys. 29, L1947 (1990).Google Scholar
2. Yamagishi, H. etal. Semicond. Sci. Technol. 7 (1992) A135.Google Scholar
3. Hourai, M. et al. Semiconductor silicon 1994, edited by Huff, H. R., Bergholz, W. and Sumino, K. (the Electrochem. Soc., Pennington, NJ, 1994) pp. 156.Google Scholar
4. Itsumi, M. et al. J. Appl. Phys. 78, 1940 (1995).Google Scholar
5. Bacthelder, J. S. and Taubenblatt, M. A., Appl. Phys. Lett. 55(3), 17 (1989).Google Scholar
6. Nakai, K. et al. to be published.Google Scholar
7. Hasebe, M. et al. Materials Science Forum vol.83–87, 1475–1480 (1992).Google Scholar
8. Tsumori, Y. et al. Mat. Res. Soc. Symp. Proc. vol.378, 23–28 (1995).Google Scholar
9. Doremus, R. H., Rates of phase transformations (Academic Press, Inc., 1985) p143.Google Scholar
10. Deai, et al. to be published.Google Scholar
11. Mizutani, T. et al. to be published.Google Scholar
12. Kato, M. et al. Abstruct of 27th National Conf. on Crystal Growth, p153 (in Japanese).Google Scholar
13. Nakamura, K. J. Mater. Sci. Eng. B vol.36, nol-3, p22–25.Google Scholar
14. Okada, Y., Phys. Rev. B 41, 10741–10743 (1990).Google Scholar