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Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

Published online by Cambridge University Press:  10 February 2011

C. H. Lin ,
B. M. Yen ,
Haydn Chen ,
T. B. Wu ,
H. C. Kuo  and
G. E. Stillman
C. H. Lin
Affiliation:
Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801
B. M. Yen
Affiliation:
Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801
Haydn Chen
Affiliation:
Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801
T. B. Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
H. C. Kuo
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana- Champaign, Urbana, IL, 61801
G. E. Stillman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana- Champaign, Urbana, IL, 61801
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Abstract

Highly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 189
Copyright
Copyright © Materials Research Society 1998

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References

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