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Characterization of high-quality epitaxial AlN films grown by MOVPE

Published online by Cambridge University Press:  21 March 2011

Tomohiko Shibata ,
Keiichiro Asai ,
Teruyo Nagai ,
Shigeaki Sumiya ,
Mitsuhiro Tanaka ,
Osamu Oda ,
Hideto Miyake  and
Kazumasa Hiramatsu
Tomohiko Shibata
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Keiichiro Asai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Teruyo Nagai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Shigeaki Sumiya
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Mitsuhiro Tanaka
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Osamu Oda
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
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Abstract

This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x1010 cm-2. The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I9.3.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Akasaki, I., Amano, H., Itoh, K., Koide, N. and Manabe, K., Inst. Phys. Conf. Ser. 129 (1992) 851.Google Scholar
2. Nakamura, S., Iwata, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
3. Khan, M. A., Chen, Q., Skogman, R. A., and Kuznia, J. N., Appl. Phys. Lett. 66, 2046 (1995).Google Scholar
4. Molnar, R. J., Singh, R., and Moustakas, T. D., Appl. Phys. Lett. 66, 268 (1995).Google Scholar
5. Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P., and Speck, J. S., J. Appl. Phys. 80, 3228 (1996)Google Scholar
6. Ponce, F. A., Cherns, D., Young, W. T., and Steeds, J. W., Appl. Phys. Lett. 69, 770 (1996).Google Scholar
7. Heying, B., Wu, X. H., Keller, S., Li, Y., Kapoinek, D., Keller, B. P., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 68, 643 (1996).Google Scholar
8. Kobayashi, K., Yamaguchi, A. A., Kimura, S., Sunakawa, H., Kimura, A., and Usui, A., Jpn. J. Appl. Phys. 38, L611 (1999).Google Scholar
9. Saxler, A., Kung, P., Sun, C. J., Bigan, E., and Razeghi, M., Appl. Phys. Lett. 64, 339 (1994).Google Scholar
10. Ohba, Y., and Hatano, A., Jpn. J. Appl. Phys. 35, L1013 (1996).Google Scholar
11. Shibata, T., Asai, K., Nakamura, Y., Tanaka, M., Kaigawa, K., Shibata, J. and Sakai, H., J. Cryst. Growth, 229, 63 (2001)Google Scholar
12. Marchand, H., Ibberson, J. P., Fini, P. T., Kozodoy, Peter, Keller, S., DenBaars, S., Speck, J. S. and Mishra, U K., MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).Google Scholar