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Characterization of Light Emission from 4H and 6H SiC MOSFETs

Published online by Cambridge University Press:  21 March 2011

P. J. Macfarlane  and
R. E. Stahlbush
P. J. Macfarlane
Affiliation:
Naval Research Laboratory, Code 6816, 4555 Overlook Ave SW, Washington, DC 20375 U.S.A
R. E. Stahlbush
Affiliation:
Naval Research Laboratory, Code 6816, 4555 Overlook Ave SW, Washington, DC 20375 U.S.A
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Abstract

While SiC devices are an attractive alternative to Si in high power applications, interface trap densities measured in SiC-based MOSFETs are significantly larger than in Si-based ones. Here, we study SiC MOSFETs using both spatial images and spectral analysis of light emission due to electron-hole recombination. The light emission is produced by alternately driving the channel between accumulation and inversion using what is essentially a charge-pumping set-up. Emission is due to interface trap and bulk electron-hole recombination. The spatial imaging studies suggest that recombination occurs at both interface traps and bulk defects. Spectral studies of the emission indicate the presence of a narrow band centered at 425 nm and a broad band extending from approximately 500 to 800nm. The former we suggest is due to bulk recombination and the latter to interface trap recombination. The spectral studies of the 500 to 800 nm band are timed to separate light emitted during the inversion-to-accumulation transition from that emitted during the accumulation-to-inversion transition and visa versa. Comparisons of the emission spectra collected during these specific periods are consistent with a larger Dit in the upper half of the bandgap than the lower half in both 4H and 6H devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H4.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 Lipkin, L. A. and Palmour, J. W., IEEE Trans. Electron Devices 46, 525 (1999).Google Scholar
2 Stahlbush, R. E. and Jernigan, G. G., in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 4, edited by Massoud, H. Z., Baumvol, J. R., Hirose, M., and Poindexter, E. H. (The Electrochemical Society, Pennington, NJ, 2000), p. 513.Google Scholar
3 Stahlbush, R. E. and Macfarlane, P. J., J. Electron. Materials (In press).Google Scholar
4 Brugler, J. S. and Jespers, P. G. A., IEEE Trans. Elec. Dev. ED–16, 297 (1969).Google Scholar
5 Neudeck, P. G., Mater. Sci. Forum 338–342, 1161 (2000).Google Scholar
6 Andreev, A. N., Anikin, M. M., Lebedev, A. A., Poletaev, N. K., Strlchuk, A. M., Syrkin, A. L., and Chelnokov, V. E., Semiconductors 28, 430 (1994).Google Scholar
7 Saks, N. S., Mani, S. S., and Agarwal, A. K., Appl. Phys. Lett. 76, 2250 (2000).Google Scholar
8 Das, M. K., Um, B. S., and Cooper, J. J.A., Mater. Sci. Forum 338–342, 1069 (2000).Google Scholar