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Characterization of Nanocavities in Silicon UsingSmall Angle X-Ray Scattering

Published online by Cambridge University Press:  01 February 2011

Myriam Dunmont ,
Vanessa Coulet ,
Gabrielle Regula  and
Françoise Bley
Myriam Dunmont
Affiliation:
myriam.dumont@univ-cezanne.fr, Paul Cézanne University, TECSEN-UMR 6122 CNRS , service 262, Escadrille Normandie Niemen, Marseille, 130397, France, 00 33 4 91 28 80 98
Vanessa Coulet
Affiliation:
vanessa.coulet@univ-cezanne.fr, Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122 CNRS, Escadrille Normandie Niemen, Marseille, 13 397, France
Gabrielle Regula
Affiliation:
gabrielle.regula@univ-cezanne.fr, Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122 CNRS, Escadrille Normandie Niemen, Marseille, 13 397, France
Françoise Bley
Affiliation:
francoise.bley@ltpcm.inpg.fr, LTPCM-ENSEEG, BP75, St-Martin-d'Hères, 38 402, France
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Abstract

The techniques of small angle X-ray scattering and transmission electron microscopy are applied to characterize the size distribution of nanocavities in a (111) Si wafer multi-implanted with He+ in the Mev range energy. The comparison between both methods shows that they all give access to the same structural information but small angle X-ray scattering additionally offers the possibility to monitor the cavity size distribution during a thermal treatment. Moreover, providing that the collected data are of good quality, the former method also allows the knowledge of the porosity of the implanted Si wafer.

Keywords

transmission electron microscopy (TEM)ion-implantationx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F06-02
Copyright
Copyright © Materials Research Society 2007

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