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Characterization of the a-SN/CDTE(110) Interface by Angle-Resolved X-Ray Photoemission

Published online by Cambridge University Press:  26 February 2011

Tzer-Shen Lin ,
William J. Partin  and
Yip-Wah Chung
Tzer-Shen Lin
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
William J. Partin
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
Yip-Wah Chung
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
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Abstract

Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultra-high vacuum. Cubic (α) -tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30 °C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the a-Sn growth mechanism and the composition profile of this semiconductor heterostructure nondestructively. From our analyses, we conclude that a-Sn grows on CdTe(110) at 30 °C by a layer by layer mechanism and forms an abrupt junction with CdTe(110).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 247
Copyright
Copyright © Materials Research Society 1987

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References

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