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Chemical Imaging of InGaAs/InAiAs Quantum Wells

Published online by Cambridge University Press:  10 February 2011

G. Mountjoy ,
P. A. Crozier ,
P. L. Fejes ,
R. K. Tsui  and
G. D. Kramer
G. Mountjoy
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
P. A. Crozier
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
P. L. Fejes
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, Mesa, AZ 85202
R. K. Tsui
Affiliation:
Motorola Inc., Phoenix Corporate Research Laboratories, 2100 E. Elliot Rd., Tempe, AZ 85284
G. D. Kramer
Affiliation:
Motorola Inc., Phoenix Corporate Research Laboratories, 2100 E. Elliot Rd., Tempe, AZ 85284
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Abstract

We have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAIAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1-xAs system, we have been able to obtain compositional information with an accuracy of about 20 % and a maximum spatial resolution of 1/2 × 1/2 unit cell. The results clearly show irregularities on a monatomic scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 57
Copyright
Copyright © Materials Research Society 1997

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References

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