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Chemical Stability of Reactively Sputtered AlN with Plasma Enhanced Chemical Vapor Deposited SiO2 and SiNx

Published online by Cambridge University Press:  15 February 2011

Jaeshin Cho  and
Naresh C. Saha
Jaeshin Cho
Affiliation:
Compound Semiconductor-1, Motorola Inc., Tempe, Arizona 85284
Naresh C. Saha
Affiliation:
Semiconductor Analytical Laboratory, Motorola Inc., Mesa, Arizona 85202
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Abstract

We have studied the chemical stability of reactively sputtered aluminum nitride film with plasma-enhanced chemical vapor deposited SiO2 and SiNx films. It was found that the PECVD SiO2 film reacted with A1N to form aluminosilicate (3Al2O3·2SiO2) at the SiO2/A1N interface after annealing above 550°C. The presence of Al-0 bonds at the SiO2/AlN interface was verified with x-ray photoelectron spectroscopy and x-ray induced Auger electron spectroscopy. The formation of aluminosilicate resulted in significant decrease in the wet etch rate of A1N layer. For SiNx/AlN/Si layered structure, no interfacial reactions were detected at the SiNx/AlN interface after annealing up to 850°C. These results confirm the thermodynamic predictions on the mutual stability of SiNx/AlN and SiO2/AlN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 253
Copyright
Copyright © Materials Research Society 1994

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References

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