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Chemical Vapor Deposition of Al Films From Dimethylethylamine Alane on GaAs(100)2×4 Surfaces

Published online by Cambridge University Press:  15 February 2011

I. Karpov ,
J. Campbell ,
W. Gladfelter  and
A. Franciosi
I. Karpov
Affiliation:
Center for Interfacial Engineering, University of Minnesota, Minneapolis, MN 55455
J. Campbell
Affiliation:
Center for Interfacial Engineering, University of Minnesota, Minneapolis, MN 55455
W. Gladfelter
Affiliation:
Center for Interfacial Engineering, University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Center for Interfacial Engineering, University of Minnesota, Minneapolis, MN 55455
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Abstract

Chemical vapor deposition (CVD) of Al from dimethylethylamnine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500°C range. The results indicate reduced impurity incorporation at the lower deposition tenmperatures, and growth rates that are relatively temperatureindependent in the low-pressure regime examined (10−4 to 10−5 Torr). At temperatures ≥400°C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (∼150°C) the specific chemistry of the CVD process affects the film texture and preferential orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 277
Copyright
Copyright © Materials Research Society 1996

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