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Chemically-Enhanced GaAs Maskless Etching Using a Novel Focused Ion Beam Etching System with a Chlorine Molecular and Radical Beam

Published online by Cambridge University Press:  28 February 2011

N. Takado ,
K. Asakawa ,
H. Arimoto ,
T. Morita ,
S. Sugata ,
E. Miyauchi  and
H. Hashimoto
N. Takado
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Asakawa
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Arimoto
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Morita
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Sugata
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
E. Miyauchi
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Hashimoto
Affiliation:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

Chlorine-enhanced GaAs maskless etching using a novel focused-ion-beametching (FIBE) system has been examined for establishing high-rate and smooth FIBE. The system is composed of an air-locked ultrahigh-vacuum chamber, a 30 KeV Ga+ FIB column and two kinds of chlorine-irradiation nozzles. A fine nozzle enabled us to irradiate a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding-gas pressure for stable Ga+ FIB emission. Highly chemically-enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained. At the maximum yield, line-scanned deep-groove (6.5 um) etching with a smooth surface, capable of fabricating a laser-cavity optical mirror, was demonstrated. The chemical-enhancement effect showed high FIB-scanning-time dependence. This effect was also observed by irradiating with a plasma-dissociated Cl radicals using a novel radical beam gun. An analytical model, based on the Ga+-ion bombardment on the chlorine-adsorbed substrate surface, suggested that the maximum chemical enhancement is obtained when the Ga+-FIB scanning time is adjusted to the chlorine-coverage time, given by the Cl2-molecule or Cl-radical flux density.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 107
Copyright
Copyright © Materials Research Society 1987

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References

1. Ishitani, T., Shimage, A. and Tamura, H., Appl. Phys. Lett. 39, 627 (1981).Google Scholar
2. Kubena, R. L., Seliger, R. L. and Stevens, E. H., Thin Solid Film, 92, 163 (1982).CrossRefGoogle Scholar
3. Harriott, L. R., Scotti, R. E., Cummings, K. D. and Ambrose, A. F., Appl. Phys. Lett. 48, 1704 (1986).Google Scholar
4. Puretz, J., Defreez, R. K., Elliott, R. A. and Orloff, J., Electron. Lett. 22, 700 (1986).CrossRefGoogle Scholar
5. Ochiai, Y., Gamo, K., and Namba, S., J. Vac. Sci. Technol. B 3, 67 (1985).CrossRefGoogle Scholar
6. Asakawa, K. and Sugata, S., J. Vac. Sci. Technol. A 4, 677 (1986).Google Scholar
7. Matsunami, N., Yamamura, Y., Itikawa, Y., Itoh, N., Kazumata, Y., Miyagawa, S., Morita, K., Shimizu, R. and Tawara, H.: Energy Dependence of the Yields of Ion-Induced Sputtering of Monatomic Solids (Institute of Plasma Physics, Nagoya University, Nagoya, 1983) p. 128.Google Scholar