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Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

Published online by Cambridge University Press:  01 February 2011

Serguei A. Chevtchenko ,
Francisco A. Agra ,
Jinqiao Xie  and
Hadis Morkoç
Serguei A. Chevtchenko
Affiliation:
chevtchenkos@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main Street, Richmond, VA, 23284-3072, United States, +1-804-8277000 Ext. 451
Francisco A. Agra
Affiliation:
agrafa@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main Street, Richmond, VA, 23284-3072, United States
Jinqiao Xie
Affiliation:
xiej@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main Street, Richmond, VA, 23284-3072, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering and Physics, 601 West Main Street, Richmond, VA, 23284-3072, United States
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Abstract

We provide a comparative study of the piezoresponse in thin Pb(ZrxTi1−x)O3 (PZT) films deposited onto GaN/sapphire and Pt/Ti/SiO2/Si substrates using the sol-gel process. The effective piezoelectric coefficient was measured by Piezoresponse Force Microscopy. The resulting effective piezoelectric coefficient obtained for PZT(∼180 nm)/GaN/sapphire structure is 16.7 ± 3.4 pm/V and for PZT(∼180 nm)/Pt/Ti/SiO2/Si structure is 7.8 ± 0.8 pm/V. We also discuss the substrate clamping effect of both structures and explain the relatively stronger piezoresponse of PZT on GaN by different orientation of films formed on the two types of substrates. In this investigation, the PZT thin films crystallized with preferred (100) and (110) orientations on platinum and GaN, respectively. The phase mode of the Piezoresponse Force Microscopy was used to demonstrate remanent polarization in PZT/GaN/sapphire structure.

Keywords

piezoresponsescanning probe microscopy (SPM)ferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-37
Copyright
Copyright © Materials Research Society 2008

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