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Comparative Theoretical Study of Amorphous and Crystalline Silicon Clusters

Published online by Cambridge University Press:  15 February 2011

M. Lannoo ,
C. Delerue  and
G. Allan
M. Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
G. Allan
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
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Abstract

The occurence of confinement effects for amorphous Si and Si:H clusters is investigated theoretically in an empirical tight binding treatment. The results show that one must consider three categories of states: strongly localized, weakly localized and delocalized. In all cases a substantial blue shift with reduction in size is obtained, of comparable magnitude for amorphous a-Si:H and crystalline clusters. These results are compared with available experimental data

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 57
Copyright
Copyright © Materials Research Society 1997

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References

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