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Comparing the Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics formed by NH3-Nitridation and N2O-Growth/Nitridation

Published online by Cambridge University Press:  22 February 2011

J. T. Yount ,
P. M. Lenahan ,
N. S. Saks  and
G. A. Brown
J. T. Yount
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802
P. M. Lenahan
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802
N. S. Saks
Affiliation:
Naval Research Laboratory, Washington, DC 20375
G. A. Brown
Affiliation:
Texas instruments, Dallas, TX 75265
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Abstract

In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 31
Copyright
Copyright © Materials Research Society 1994

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References

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