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Comparison Of Aln Films Synthesized By Pulsed Laser Ablation And Magnetron Sputtering Techniques

Published online by Cambridge University Press:  10 February 2011

K. Jagannadham ,
A. K. Sharma ,
Q. Wei ,
R. Kalyanraman  and
J. Narayan
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
A. K. Sharma
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
Q. Wei
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
R. Kalyanraman
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
J. Narayan
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
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Abstract

A comparative study is reported on the aluminum nitride (AIN) films on Si (111) substrate deposited by pulsed laser deposition and reactive magnetron sputtering. The structure, bonding characteristics, relative impurity levels, and wear resistance have been investigated to compare these films. We have used the techniques such as high resolution transmission electron microscopy, Raman spectroscopy, fourier transform infra-red spectroscopy, secondary ion mass spectrometry, and crater grinding method for wear test, to delineate differences between these AIN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 469
Copyright
Copyright © Materials Research Society 1998

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References

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