Hostname: page-component-68945f75b7-gkscv Total loading time: 0 Render date: 2024-08-06T04:17:14.687Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Cosi2- and Tisi2-Polycide Interconnections Tested by Conventional and High Accelerated Reliability Tests

Published online by Cambridge University Press:  25 February 2011

Dirk Depta  and
Ingo Hollenbeck
Dirk Depta
Affiliation:
Universität Hannover, Institut für Halbleitertechnologie und Werkstoffe in der Elektrotechnik, Appelstraβe 11 A, 30617 Hannover, Germany
Ingo Hollenbeck
Affiliation:
Universität Hannover, Institut für Halbleitertechnologie und Werkstoffe in der Elektrotechnik, Appelstraβe 11 A, 30617 Hannover, Germany
Get access

Abstract

Based on 2μm-wide CoSi2-n+- and TiSi2-n+-polycide structures with a l00nm-thick silicide and a standard AlSi-metallization a comparison between conventional and the high accelerated SWEAT-test was carried out. Supported by simulations different parameters (e.g. activation energie EA) were determined by time-to-failure-measurements. Because of comparable results out of both different tests the SWEAT-test will be prefered due to short time-to-test. Also it will be shown that both silicide systems have an about three times higher activation energy for the inducing of EM-based “open”-failures than the tested standard AlSi-metallization. The failure-rate was less than 100 FIT for both polycides but because of process advantages the CoSi2-polycide should be a promissing metallization to improve the reliability of single and/or multilevel-metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 495
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Murarka, S.P., Instr, J..Electronics & Telecom. Engers., 37, No.2, pp.171 (1991)Google Scholar
2 Root, B.J., Turner, T., Proc. of the 23rd Reli.Phys.Symp., Orlando/FA, pp.100 (1985)Google Scholar
3 Crowell, C.R., Shih, C.C., Tyree, V., Proc. of the 28th Reli.Phys.Symp., New Orleans,pp. 37–43 (1990)Google Scholar
4 Hasse, W., Depta, D., Weide, K., Proc. of 3rd Euro.Symp. on Rel.of Elect. Devices, Fail. Phy. and Analy. (ESREF 92), Schwäbisch-Gmünd, Germany, pp. 371 (1992)Google Scholar
5 Dion, M.J., Proc. of the 30th Reli.Phys.Symp., San Diego/CA,pp.232–238 (1992)Google Scholar
6 Black, F.P., Proc.of the 12th Rel.Phy.Symp., New York, pp.142 (1974)Google Scholar