Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T11:17:16.171Z Has data issue: false hasContentIssue false
  • English
  • Français

A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells

Published online by Cambridge University Press:  01 February 2011

Vincent Barrioz ,
Rachael L. Rowlands ,
Eurig W. Jones ,
Stuart J. C. Irvine ,
Guillaume Zoppi  and
Ken Durose
Vincent Barrioz
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Rachael L. Rowlands
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Eurig W. Jones
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Stuart J. C. Irvine
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Guillaume Zoppi
Affiliation:
Department of Physics, University of Durham, Science Laboratories, South Road, Durham DH1 3LE
Ken Durose
Affiliation:
Department of Physics, University of Durham, Science Laboratories, South Road, Durham DH1 3LE
Get access

Abstract

A comparison has been made of MOCVD grown CdTe/CdS solar cells processed either by ex situ annealing with CdCl2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using Jsc measurements on arrays of gold contacts to the CdTe. The Jsc increased from around 1 mA cm-2 for undoped and unannealed layers to a range of 25-30 mA cm-2 for CdCl2 annealed layers. In situ arsenic doping resulted in Jsc values up to 18 mA cm-2. The annealing characteristics were very different for these films, compared with the CdCl2 annealed films, with annealing at 500°C dramatically reducing the Jsc. Only annealing under nitrogen at 400°C produced an improvement in Jsc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F3.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chou, H. C., Rohatgi, A., Jokerst, N. M., Kamra, S., Stock, S. R., Lowrie, S. L., Ahrenkiel, R. K. and Levi, D. H., Materials Chemistry and Physics 43, 178 (1996)Google Scholar
2 C. Irvine, S. J., Hartley, A. and Stafford, A., J. Crystal Growth 221, 117 (2000)Google Scholar
3 Berrigan, R. A., Maung, N., Irvine, S. J. C., Cole-Hamilton, D. J. and Ellis, D., J. Crystal Growth 195, 718 (1998)Google Scholar
4 Wu, X., Solar Energy 77, 803 (2004)Google Scholar
5 Chu, T. L., Chu, S. S., Ferekides, C., Britt, J., Wu, C. Q., J. Appl. Phys. 71, 3870, (1992)Google Scholar
6 Zoppi, G., Durose, K., Irvine, S.J.C. and Barrioz, V. Proceedings of the 19th European Photovoltaic Solar Energy Conference Paris, 7-11 June, Vol II, 1921, 2004 Google Scholar
7 Stafford, A., C. Irvine, S. J., Durose, K. and Zoppi, G., Mat. Res. Soc. Symp. Proc. Vol. 763, 25 (2003)Google Scholar
8 Svob, L., Marfaing, Y., Clerjaud, B., Cote, D., Lebkiri, A., Druilhe, R., J. Crystal Growth 159, 72 (1996)Google Scholar