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Comprehensive Study of the Electrothermal Operation of SiC Power Devices Using a Fully Coupled Physical Transport Model

Published online by Cambridge University Press:  15 March 2011

M. Lades ,
W. Kaindl  and
G. Wachutka
M. Lades
Affiliation:
Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr. 21, D-80290 Munich, Germany. Phone: +49 89 2892 3122, FAX: +49 89 2892 3164, email: lades@tep.ei.tum.de, wachutka@tep.ei.tum.de
W. Kaindl
Affiliation:
Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr. 21, D-80290 Munich, Germany. Phone: +49 89 2892 3122, FAX: +49 89 2892 3164, email: lades@tep.ei.tum.de, wachutka@tep.ei.tum.de
G. Wachutka
Affiliation:
Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr. 21, D-80290 Munich, Germany. Phone: +49 89 2892 3122, FAX: +49 89 2892 3164, email: lades@tep.ei.tum.de, wachutka@tep.ei.tum.de
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Abstract

Based on an extended electrothermal drift-diffusion model formulated within the framework of phenomenological transport theory, a consistent set of material parameters for 4H- and 6H-SiC is presented. Furthermore we report on detailed numerical studies of the coupled effect between transient impurity kinetics and impact ionization, which alters the reverse blocking characteristics of power devices under short switching conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T1.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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