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Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

Published online by Cambridge University Press:  21 February 2011

V.V. Bazarov ,
V.Yu. Petukhov ,
V.A. Zhikharev  and
I.B. Khaibullin
V.V. Bazarov
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
V.Yu. Petukhov
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
V.A. Zhikharev
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
I.B. Khaibullin
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
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Abstract

Thin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 417
Copyright
Copyright © Materials Research Society 1995

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References

1 Dresselhaus, M. S., Wasserman, B., Whek, G. E., Mat.Res.Soc.Symp.Proc.27, 413–422 (1984);C.J.Sufield, S.Sugden, C. J. Bedell, P. R. Graves and L. B. Bridwell, Nucl.Instr andMeth. 867,432 (1992).Google Scholar
2 Yongqiang, Wang, Bridwell, L.B., Giedd, R.E., J appl.Phys. 73(1), 474–476 (1993)Google Scholar
3 Petukhov, V.Yu., Zhikharev, V.A., Zheglov, E.P., Azarov, I A, Khaibullin, I.B. Proc. of 27 aMPERE Congress, Kazan, 1994, pp.370–371; V.Yu.Petukhov, V.A.Zhikharev, N.R.Khabibullina, I.B.Khaibullin, Vysokochistye veschestva, 1993. N3, 45-48.[High-purity substances, 7, N3, 274-276 (1993)].Google Scholar
4 B.Abeles, , Ping Sheng, M.D.Coutts, Y.Arie, , adv.Phys., 24, 407 (1975).Google Scholar
5 C.J.Adkins, , J.Phys.C:Solid State Phys., 15, 7143–7155 (1982).Google Scholar
6 Ping, Sheng, J.Klafter, , Phys. Rev., B27(4), 2583–2586 (1983).Google Scholar