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Control of threading dislocations in lattice-mismatched heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

L.J. Schowalter ,
A.P. Taylor ,
J. Petruzzello ,
J. Gaines  and
D. Olego
L.J. Schowalter
Affiliation:
Physic Dept. and Ctr. for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
A.P. Taylor
Affiliation:
Physic Dept. and Ctr. for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
J. Gaines
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
D. Olego
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
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Abstract

It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 485
Copyright
Copyright © Materials Research Society 1992

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References

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