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Controlling the Concentration and Position of Nitrogen in Ultrathin Oxynitride Films Formed by Using Oxygen and Nitrogen Radicals

Published online by Cambridge University Press:  10 February 2011

K. Watanabe ,
M. Togo  and
T. Tatsumi
K. Watanabe
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JAPAN, watanabe@lbr.cl.nec.co.jp
M. Togo
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, JAPAN
T. Tatsumi
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JAPAN, watanabe@lbr.cl.nec.co.jp
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Abstract

The formation of oxynitride films less than 2.0 nm by using oxygen and nitrogen radicals produced by an electron cyclotron resonance plasma in an ultrahigh-vacuum system has been studied. The nitrogen concentration of the films was evaluated by x-ray photoelectron spectroscopy, and the position of the N in the films was evaluated by secondary ion mass spectroscopy. The interface roughness was also investigated by using atomic force microscopy. We found that the N concentration can be controlled at values up to 22.5%, and that although the interface roughness tends to increase with increasing N concentration, supplying oxygen and nitrogen radicals simultaneously decreases the roughness of the film and increases its nitrogen concentration (N: 18.2%, RMS: 0.12 nm). We also found that the nitrogen profile can be controlled by using different processing sequences. Radical oxynitridation should thus be very useful for making ultrathin gate-insulator films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 189
Copyright
Copyright © Materials Research Society 2000

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References

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