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The core Structure Of Pure Edge Threading Dislocations In Gan Layers Grown On [0001] SiC Or Sapphire By Mbe

Published online by Cambridge University Press:  10 February 2011

P. Ruterana ,
V. Potin  and
G. Nouet
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, pierre@leriris1.ismra.fr
V. Potin
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, pierre@leriris1.ismra.fr
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, pierre@leriris1.ismra.fr
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Abstract

The best layers of GaN grown on SiC or sapphire contain high densities of threading dislocations, which do not seem to exhibit a critically important electrical activity. It is possible that the electrical activity of these dislocations may change with time. The large majority of the threading dislocations are a type, with 1/3 <1120> Burgers vector and their line parallel to the [0001] growth direction. The atomic structure of the a threading dislocations was found to correspond to 5/7 or 8 atoms rings core with rather equal frequency. The 8 atoms ring cores contain dangling bonds and will present favourable sites for atomic impurities which eventuallly can modify the good performances of the devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 459
Copyright
Copyright © Materials Research Society 1998

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