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Correlation Between Plasma Excited States and Thin Film Characteristics in He-SiH4 PECVD
Published online by Cambridge University Press: 21 February 2011
Abstract
The excited states of He-5 % SiH4 PECVD have been analysed by emission and absorption spectroscopy.
Variations of spectral line intensities and He(23S) metastable densities have been correlated to the SiH over SiH2 bond ratio and to the deposition speed.
The best correlation has been found with the He excited states, specially He(23S) metastables : SiH films without SiH2 bonds have been obtained when the He(23S) densities reach a minimum value.
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- Copyright © Materials Research Society 1985
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