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Correlation of Structure and Structural Changes with Photovoltaic Quality of a-Si:D,H and a-Ge:D,H Films

Published online by Cambridge University Press:  21 February 2011

R. E. Norberg ,
P. A. Fedders ,
J. Bodart ,
R. Corey ,
Y. W. Kim ,
W. Paul  and
W. Turner
R. E. Norberg
Affiliation:
Washington University, St. Louis, MO 63130, USA
P. A. Fedders
Affiliation:
Washington University, St. Louis, MO 63130, USA
J. Bodart
Affiliation:
Washington University, St. Louis, MO 63130, USA
R. Corey
Affiliation:
Washington University, St. Louis, MO 63130, USA
Y. W. Kim
Affiliation:
Washington University, St. Louis, MO 63130, USA
W. Paul
Affiliation:
Harvard University, Cambridge, MA 02138, USA
W. Turner
Affiliation:
Harvard University, Cambridge, MA 02138, USA
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Abstract

Deuteron magnetic resonance (DMR) resolves structures such as tightly bound D, weakly bound D, molecular HD and D2 in microvoids and trapped on nanovoid internal surfaces in plasma-deposited a-Si:D,H and a-Ge:D,H. The relative populations of these structures correlate with photovoltaic quality as characterized by photo response function ημτ in a series of deuterated a-Ge and a-Si films. It is found that photo-illumination produces DMR-detected changes in these populations. The changes, which are reversible upon a 150°C dark anneal, include a quadrupolar doublet from strained-bond configurations and a shift from metastable electronic species. The spin-lattice relaxation of most of the components follows an error-function behavior characteristic of magnetization transport under extreme inhomogeneity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 223
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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