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Creep Behavior of MoSi2-SiC Composites

Published online by Cambridge University Press:  25 February 2011

Darryl P. Butt
Affiliation:
Materials Division, P.O. Box 1663, M.S. G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Stuart A. Maloy
Affiliation:
Materials Division, P.O. Box 1663, M.S. G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
H. Kung
Affiliation:
Materials Division, P.O. Box 1663, M.S. G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
David A. Korzekwa
Affiliation:
Materials Division, P.O. Box 1663, M.S. G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
John J. Petrovic
Affiliation:
Materials Division, P.O. Box 1663, M.S. G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Using a cylindrical indenter, the indentation creep behavior of hot pressed and HIPed MoSi2-SiC composites containing 0-40% SiC by volume, was characterized at 1000-1200°C, 258-362 MPa. The addition of SiC affects the creep behavior of MoSi2 in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi2 grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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