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Critical Assessment of Sub-Bandgap Primary Photocurrent in a-Si:H Based Solar Cells.

Published online by Cambridge University Press:  21 February 2011

T. X. Zhou
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
S. S. Hegedus
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
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Abstract

The sub-bandgap primary photocurrent and the solar cell performance of a-Si:H p-i-n devices have been studied before and after light induced degradation. The results indicate significant discrepancy between the two methods when used to estimate the degree of degradation and the defect density in the i-layers. A preliminary explanation is proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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