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Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals

Published online by Cambridge University Press:  21 February 2011

P.M Fauchet  and
I.H. Campbell
P.M Fauchet
Affiliation:
Department of Electrical Engineering PrincetonUniversity Princeton, NJ 08544
I.H. Campbell
Affiliation:
Department of Electrical Engineering PrincetonUniversity Princeton, NJ 08544
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Abstract

Raman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the first order Raman spectrum it is possible to determine the size and shape of microcrystalline grains. First order spectra must be examined with care however, since they are sensitive to other factors including: stress/strain, surface vibrations, mixed amorphous/microcrystalline phases and intragrain defects. Second order Raman spectra are more sensitive to microcrystalline effects than first order spectra. They offer the potential to measure crystal sizes greater than a few hundred angstroms but much work remains to be done to quantify the size dependence of the second order spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 259
Copyright
Copyright © Materials Research Society 1990

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References

1. Fauchet, P.M. and Campbell, I.H., Crit. Rev. Solid State Mater. Science 14, 579 (1988).Google Scholar
2. Okada, Y. et al. ; Nemanich, R.J. et al. ; Sasaki, Y. et al. , this volume.Google Scholar
3. Nemanich, R.J. and Solin, S.A., Phys. Rev. 20, 392 (1979).Google Scholar
4. Richter, H., Wang, Z.P. and Ley, L., Solid State Commun., 39, 625 (1981).Google Scholar
5. Sandroff, C.J. and Farrow, L.A., Chem. Phys. Lett., 130, 458 (1986).Google Scholar
6. Campbell, I.H. and Fauchet, P.M., Solid State Commun., 58, 739 (1986).Google Scholar
7. Campbell, I.H. and Fauchet, P.M., Proc. 18th Int. Conf. Physics Semiconductors, Engstrom, O. ed., World Scientific, Singapore, 1987, 1357.Google Scholar
8. Campbell, I.H., Fauchet, P.M. and Adar, F., Mat. Res. Soc. Symp. Proc. 53, 311 (1986).Google Scholar
9. Gonzalez-Hernandez, J., Azarbayajani, G.H., Tsu, R. and Pollak, F.H., Appl. Phys. Lett. 47, 1350 (1985).Google Scholar
10. Gonzalez-Hernandez, J. and Tsu, R., Appl. Phys. Lett., 42, 90 (1983).Google Scholar
11. Fauchet, P.M., Campbell, I.H. and Adar, F., Appl. Phys. Lett. 47, 479 (1985).Google Scholar
12. Hayashi, S. and Yamamoto, K., Superlattices and Microstructures 2, 581 (1986).Google Scholar
13. Temple, P.A. and Hathaway, C.E., Phys. Rev. B7, 3685 (1973).Google Scholar
14. Birman, J.L., Phys. Rev. B131, 1489 (1963).Google Scholar
15. Weinstein, B.A. and Piermarini, G.J., Phys. Rev. B12, 1172 (1975).Google Scholar
16. Klein, P.B., Masui, H., Song, J.-J. and Chang, R.K., Solid State Commun., 14, 1163 (1974).Google Scholar