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Crystallization Behavior of the Amorphous Si1-xGex Films Deposited on SiO2 by Molecular Beam Epitaxy(MBE)

Published online by Cambridge University Press:  15 February 2011

Chang-Won Hwang ,
Myung-Kwan Ryu ,
Ki-Bum Kim ,
Seung-Chang Lee  and
Chang-Soo Kim
Chang-Won Hwang
Affiliation:
Department of Metallurgical Engineering, Seoul National Universitv, Seoul, Korea, 151–742
Myung-Kwan Ryu
Affiliation:
Department of Metallurgical Engineering, Seoul National Universitv, Seoul, Korea, 151–742
Ki-Bum Kim
Affiliation:
Department of Metallurgical Engineering, Seoul National Universitv, Seoul, Korea, 151–742
Seung-Chang Lee
Affiliation:
Unit Process Research Section, Electronics and Telecommunications Research Institute, Chungnam, Korea, 305–606
Chang-Soo Kim
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards Science, Chungnam, Korea, 305–606
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Abstract

We have investigated solid phase crystallization behavior of the MBE grown amorphous Si1-xGex (x=0 to 0.53) layers using x-ray diffractometry and transmission electron microscopy (TEM). It is found that the thermal budget of the solid phase crystallization of the film is significantly reduced as the Ge concentration in the film is increased. In addition, we find that the amorphous Si film crystallizes with a strong (111) texture while the Si1-xGex alloy film crystallizes with a (311) texture suggesting that the solid-phase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized film shows that the grain morphology of the pure Si is an elliptical or a dendrite shape with a high density of microtwins in the grains while that of the Si0.47 Ge0.53 alloy is more or less equiaxed shape with a much low density of crystalline defects in them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 149
Copyright
Copyright © Materials Research Society 1994

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