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Crystallization of Hydrogenated Amorphous Silicon Thick Films on Molybdenum Substrates

Published online by Cambridge University Press:  15 February 2011

Nagarajan Sridhar ,
D. D. L. Chung  and
W. A. Anderson
Nagarajan Sridhar
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
D. D. L. Chung
Affiliation:
Also with Department of Mechanical and Aerospace Engineering
W. A. Anderson
Affiliation:
Also with Department of Electrical and Computer Engineering
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Abstract

Crystallization of hydrogenated amorphous silicon thick films deposited by dc glow discharge on molybdenum substrates was studied by Raman scattering and x-ray diffraction. Investigation was made as a function of amorphous silicon film deposition temperature. On heating the films at a rate of 5 °C/min to 650 °C for various times, it was observed that the film deposited at 300 °C started crystallization faster than the film deposited at 150 °C. The degree of cirystallinity increased with increasing annealing time for all the films. However, at all annealing times, the degree of crystallinity for the annealed film deposited at 150 °C was higher than that of the annealed film deposited at 300 °C, indicating that the crystallization growth rate was higher for the film deposited at a lower temperature. These results were consistent with the dark conductivity measurements. The film deposited at 150 °C showed a photoresponse which increased with increasing annealing time whereas no photoresponse was observed for the film deposited at 300 °C. This was probably due to the degree of crystallinity and grain size being much larger for the film deposited at 150 °C than the film deposited at 300 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 697
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Chu, T. L., J. Cryst. Growth 39, 45 (1977).Google Scholar
2. Morozumi, S., Oguchi, K., Misawa, T., Araki, R. and Ohshima, H., in SID 84 Dig., 316 (1984).Google Scholar
3. Malhi, S. D., Shichijo, H., Banerjee, S. K., Sundaresan, R., Elahy, M., Pollack, G., Richardson, W., Shah, A. H., Hite, L. R., Womack, R. H., Chatterjee, P. K. and Lam, H. W., IEEE Trans. Electron Devices ED–32, 258 (1985).Google Scholar
4. Kamins, T. I., Mandurah, M. M. and Saraswat, K. C., J. Electrochem. Soc, 125, 927 (1978).Google Scholar
5. Nagasima, N. and Kubota, N., Jpn. J. Appl. Phys. 14, 1105 (1975).Google Scholar
6. Kamins, T. I. and Chiang, K. L., J. Electrochem. Soc. 129, 2326 (1982).Google Scholar
7. Harbeke, G., Krausbauer, L., Steigmeier, E. F., Widmer, A. E., Kappert, H. F. and Neugebauer, G., J. Electrochem. Soc. 131, 675 (1984).CrossRefGoogle Scholar
8. Becker, F. S., Oppolzer, H., Weitzel, I., Eichermuller, H. and Schaber, H., J. Appl. Phys. 56, 1233 (1984).Google Scholar
9. Iverson, R. B. and Reif, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar
10. Nakazawa, K. and Tanaka, K., J. Appl. Phys. 68, 1029 (1990).Google Scholar
11. Hatalis, M. K. and Greve, D. W., J. Appl. Phys. 63, 2260 (1988).Google Scholar
12. Hasegawa, S., Nakamura, T. and Kurata, Y., Jpn. J. Appl. Phys. 31, 161 (1992).Google Scholar
13. Cullity, B. D., Elements of X-ray Diffraction (Addison- Wesley, Reading, MA, 1967).Google Scholar
14. Bisaro, R., Magarino, J., Zellama, K., Squelard, S., Germain, P. and Morhange, J. F., Phys. Rev. B, 31, 3568 (1985).Google Scholar
15. Hasegawa, S., Morita, M. and Kurata, Y., J. Appl. Phys. 64, 4154 (1988).Google Scholar