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Crystallographic Aspects of Low Energy Boron Implantation Into Silicon

Published online by Cambridge University Press:  26 February 2011

R. F. Lever  and
K. W. Brannon
R. F. Lever
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY 12533
K. W. Brannon
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY 12533
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Abstract

The computer program MARLOWE has been used to investigate low energy boron implantation into silicon. When implanted in a “random” direction at 5 keV, the most deeply penetrating ions are seen to have spent an appreciable part of their path travelling in <001>, <011> or <112> axial directions or in {111} or {220} planar channels. Channeling was then investigated more directly by observing the mean path travelled by the ions in the direction of incidence as a function of both azimuthal and tilt angles between the direction of incidence and the 001 direction. At 5 keV, {111} planar channeling and <110>, <112>, <111> and <100> axial channeling is prominent, with {220} planar and <310> and <114> axial channeling observed to a lesser degree. Higher order planar channeling such as {400}, {331}, {422} or (511} was not observed at 5 keV. At 0.75 keV only <110>. <100> and <112> axial channeling and {111} planar channeling remained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 249
Copyright
Copyright © Materials Research Society 1988

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References

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