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Cu2ZnSnSe4 from Chemically Deposited Binary Films

Published online by Cambridge University Press:  01 August 2014

Enue Barrios-Salgado ,
José Campos ,
M. T. S. Nair  and
P. K. Nair
Enue Barrios-Salgado
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México|
José Campos
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México|
M. T. S. Nair
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México|
P. K. Nair
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México|
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Abstract

Chemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

Keywords

electronic materialfilmphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium E/H – Advances in the Characterization, Performance and Defect Engineering of Earth Abundant and Thin-Film Materials for Solar Energy Conversion , 2014 , mrss14-1670-e05-14
Copyright
Copyright © Materials Research Society 2014 

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