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Current Issues of High-Pressure Bridgman Growth of Semi-Insulating CdZnTe

Published online by Cambridge University Press:  10 February 2011

Csaba Szeles  and
Elgin E. Eissler
Csaba Szeles
Affiliation:
eV Products a division of lI-VI, Inc., Saxonburg, PA 16056
Elgin E. Eissler
Affiliation:
eV Products a division of lI-VI, Inc., Saxonburg, PA 16056
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Abstract

The availability of large-size, detector-grade CdZnTe crystals in large volume and at affordable cost is a key to the further development of radiation-detector applications based on this II-VI compound. The high pressure Bridgman technique that supplies the bulk of semiinsulating CdZnTe crystals used in X-ray, γ-ray detector and imaging devices at present is hampered by material issues that limit the yield of large-size and high-quality crystals. These include ingot cracking, formation of pipes, material homogeneity and the reproducibility of the material from growth to growth. The incorporation of macro defects in the material during crystal growth poses both material quality limitations and technological problems for detector fabrication. The effects of macro defects such as Te inclusions and pipes on the charge-transport properties of CdZnTe are discussed in this paper. Growth experiments designed to study the origin and formation of large defects are described. The importance of material-crucible interactions and control of thermodynamic parameters during crystal growth are also addressed. Opportunities for growth improvements and yield increases are identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 309
Copyright
Copyright © Materials Research Society 1998

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References

1 James, R.B., Schlesinger, T.E., Lund, J., and Schieber, M. in Semiconductors and Semimetals, Vol.43, (Academic Press, New York, 1997), p. 335.Google Scholar
2 Parnham, K.B., Nucl. Instrum. Meth. A377, 487 (1996).Google Scholar
3 Zanio, K. in Semiconductors and Semimetals, Vol. 13, ed. by Willardson, R.K. and Beer, A.C. (Academic Press, New York, 1978), p. 103.Google Scholar
4 Sieffert, P., Berger, J., Scharager, C., Comet, A., Stuck, R., Bell, R.O., Serreze, H.B., and Wald, F. V., IEEE Trans. Nucl. Science NS–23, 159 (1976).Google Scholar
5 Triboulet, R., Marfaring, Y., Comet, A. and Siffert, P., J. Appl. Phys. 45, 2759 (1974).Google Scholar
6 Greenberg, J.H., Guskov, V.N., Lazarev, V.B., and Shebershneva, O.V., J. Solid State Chem. 102, 382 (1993).Google Scholar
7 Heffelfmger, J.R., Medlin, D.L., Yoon, H., Hermon, H. and James, R.B., SPIE Proceedings Series, Vol.3115, 40 (1997).Google Scholar
8 Toney, J.M., talk at the 5th Symposium on Room-Temperature Semiconductor X-ray, Gamma-ray and Neutron Detectors, Sandia, March 1997.Google Scholar
9 Rudolph, P. and Mühlberg, M., Mater. Sci. Eng. B16, 8 (1993).Google Scholar
10 Vydyanath, H.R., Ellsworth, J., Kennedy, J.J., Dean, B., Johnson, C.J., Neugebauer, G.T., Sepich, J., Liao, P.-K., J. Vac. Sci. Technol. B10, 1476 (1992).Google Scholar
11 Sea, S., Liang, C.S., Rhiger, D.R., Stennard, J.E., Arlinghaus, H.F., J. Electron. Mater. 25, 1188 (1996).Google Scholar
12 Marbeuf, A., Druilhe, R., Triboulet, R., and Patriarche, G., J. Crystal Growth, 117, 10 (1992).Google Scholar
13 Ruault, M.-O., Kaitasov, O., Triboulet, R., Crestou, J., and Gasgnier, M., J. Crystal Growth, 143, 40 (1994).Google Scholar
14 Fougeres, P., Hage-Ali, M., Koebel, J.M., Sieffert, P., Hassan, S., Lusson, A., Triboulet, R., Marrakchi, G., Zerrai, A., Cherkaoui, K., Adhiri, R., Bremond, G., Kaitasov, O., Ruault, M.O., and Crestou, J., 6th Int. Conf. on II–VI Compounds, Grenoble, France 1997.Google Scholar
15 Doty, F.P., Digirad, Inc., private communication.Google Scholar