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CW Argon-ion Laser Crystallization of a-Si:H Thin Films

Published online by Cambridge University Press:  17 March 2011

A. Sunda-Meya ,
D. Gracin ,
J. Dutta ,
B. Vlahovic  and
R.J. Nemanich
A. Sunda-Meya
Affiliation:
Department of Physics, North Carolina Central University, Durham, NC
D. Gracin
Affiliation:
Department of Physics, North Carolina Central University, Durham, NC On leave from Materials Science Division, Rudjer Boskovic Institute, Zagreb, Croatia
J. Dutta
Affiliation:
Department of Physics, North Carolina Central University, Durham, NC
B. Vlahovic
Affiliation:
Department of Physics, North Carolina Central University, Durham, NC
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC
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Abstract

Thin a-Si:H films, with a thickness of 1 µm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.9
Copyright
Copyright © Materials Research Society 2001

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References

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