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Deep Donor-Acceptor Pair Luminescence in Codoped GaN

Published online by Cambridge University Press:  11 February 2011

Bing Han ,
Joel M. Gregie ,
Melville P. Ulmer  and
Bruce W. Wessels
Bing Han
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208, USA
Joel M. Gregie
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208, USA
Melville P. Ulmer
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208, USA
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Abstract

Deep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescent behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L5.8
Copyright
Copyright © Materials Research Society 2003

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References

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