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Defect Accumulation and Recovery in Ion-Implanted 6H-SiC

Published online by Cambridge University Press:  01 February 2011

W. Jiang ,
W. J. Weber  and
C. M. Wangxya
W. Jiang
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland,WA 99352, U.S.A.
W. J. Weber
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland,WA 99352, U.S.A.
C. M. Wangxya
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland,WA 99352, U.S.A.
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Abstract

Single crystal wafers of <0001>-oriented 6H-SiC were irradiated at different temperatures using a variety of ion species. The disorder on both the Si and C sublattices has been studied in situ using a combination of ion beam analyses in multiaxial channeling geometry. The fraction of the irradiation-induced defects surviving simultaneous recovery processes decreases with decreasing ion mass and with increasing irradiation temperature. Some of the Si and C defects are well aligned with the <0001> axis and the rate of C disordering is higher than that of Si disordering. Three recovery stages in Au2+-irradiated 6H-SiC have been identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F11.3
Copyright
Copyright © Materials Research Society 2002

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