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A Defect Map for Degradation of Ingaasp/Inp Long Wavelength Laser Diodes

Published online by Cambridge University Press:  10 February 2011

S.N.G. Chu  and
S. Nakahara
S.N.G. Chu
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
S. Nakahara
Affiliation:
Breinigsville, PA 18031
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Abstract

We summarize the characteristic defect structures associated with gradual-degradation, rapiddegradation, catastrophic (mirror-facet) optical damage (COD), electric static discharge (ESD) and electric overstress (EOS) damages to provide a defect-map for device failure mode analysis. The generation mechanisms of these lattice defects are discussed which pinpoint the weak links in the device structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 407
Copyright
Copyright © Materials Research Society 1996

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References

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