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Defects and Strain in GexSi1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

K. H. Jung ,
Y. M. Kim ,
H. G. Chun ,
D. L. Kwong  and
L. Rabenberg
K. H. Jung
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
Y. M. Kim
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
H. G. Chun
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
L. Rabenberg
Affiliation:
Center for Materials Science and EngineeringThe University of Texas at Austin, Austin, TX 78712
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Abstract

We have grown single and multi-layer epitaxial GexSi1−x/Si structures by RTPCVD on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeHH4 ratios of 14:1 to 95:1 at 5 Torr. Plane view TEM micrographs indicate misfit dislocation free layers were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Plane view TEM micrographs also showed dislocation loops at the interface. When the SiH2C12:GeH4 ratio used was less than 25:1, the GexSil−x layer grew by three-dimensional nucleation, resulting in a high density of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 335
Copyright
Copyright © Materials Research Society 1989

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