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Defects in Photo-Assisted CBE-Grown GaAs

Published online by Cambridge University Press:  22 February 2011

Peter J. Goodhew ,
R. Beanland  and
T. Farrell
Peter J. Goodhew
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O.Box 147, Liverpool L69, 3BX, England.
R. Beanland
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O.Box 147, Liverpool L69, 3BX, England.
T. Farrell
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O.Box 147, Liverpool L69, 3BX, England.
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Abstract

Excimer laser light has been used to achieve the maximum growth rate of GaAs in a chemical beam epitaxy system when temperatures were more than a hundred degrees below the normalgrowth temperature. Secondary electron and transmitted electron microscopy of material grown using laser assistance shows the presence of surface ripples aligned with crystallographic directions. Layers grown at the lowest temperatures using a high fluence of excimer laser light contain a high density of small dislocation tangles (>1011 cm-−2 ). Lower fluences have no effect on the microstructure of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 39
Copyright
Copyright © Materials Research Society 1993

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References

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