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Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide

Published online by Cambridge University Press:  14 March 2011

C.E. Whiteley ,
A. Mayo ,
J.H. Edgar ,
M. Dudley  and
Y. Zhang
C.E. Whiteley
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
A. Mayo
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794.
Y. Zhang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794.
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Abstract

The present work reports on the defect-selective etching (DSE) for estimating dislocation densities in icosahedral boron arsenide (B12As2) crystals using molten potassium hydroxide (KOH). DSE takes advantage of the greater reactivity of high-energy sites surrounding a dislocation, compared to the surrounding dislocation-free regions. The etch pits per area are indicative of the defect densities in the crystals, as confirmed by x-ray topography (XRT). Etch pit densities were determined for icosahedral boron arsenide crystals produced from a molten nickel flux as a function of etch time (1-5 minutes) and temperature (400-700°C). The etch pits were predominately triangle shaped, and ranged in size from 5-25μm. The average etch pit density of the triangle and oval etch-pits was on the order of 5x107cm-2 and 3x106cm-2 (respectively), for crystals that were etched for two minutes at 550°C.

Keywords

Bdefectsdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc05-18
Copyright
Copyright © Materials Research Society 2011

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References

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