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Delineation of p-n Junctions on Cross Sectional TEM Device Samples

Published online by Cambridge University Press:  16 February 2011

Dirk Knoesen ,
Fang Zhang  and
George A. Rozgonyi
Dirk Knoesen
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
Fang Zhang
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
George A. Rozgonyi
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
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Abstract

The delineation of n-p junctions is one of the techniques routinely required in the analysis of electronic devices. The delineation of the junction profile is typically done either in a scanning electron microscope (SEM) or by angle lapping / staining/ optical microscopy. Recently TEM foils have been selectively etched to simultaneously provide an interface demarcation and an image of processed induced dislocations. A case study is presented in this report on concentration dependent delineation techniques with emphasis on the special problems associated with cross sectional transmission electron microscopy (XTEM) samples. The etchants used in delineating junctions for the SEM or with angle lapping / optical microscopy of transistors are too aggressive for the extremely thin TEM foils. This paper discusses etchants which deliver reproducible, high contrast delineations in XTEM samples with known concentration profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 299
Copyright
Copyright © Materials Research Society 1990

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References

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