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Densification and Crystallization of Amorphous SiO2 by Neutral Beam Bombardment

Published online by Cambridge University Press:  22 February 2011

Tatsumi Mizutani
Tatsumi Mizutani*
Affiliation:
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
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Abstract

Amorphous SiO2 films formed by thermal oxidation of silicon have been bombarded by low-energy (350 — 400 eV) ion beam and neutral beam of inert atoms. The modified SiO2 layers have been characterized by Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS) and reflection high energy electron diffraction (RHEED). It is shown that neutral beam bombardment does not cause preferential sputtering of oxygenfrom SiO2, whereas ion beam of the same energy causes significant preferential sputtering. For neutral bombardment, densification and crystallization of SiO2 have been observed. The formation of α-cristobalite and α-quartz from amorphous SiO2 has been observed for high dose bombardments (>1017neutrals/cm2). These densification and crystallization phenomena can be attributed to high temperature and high pressure local spot formation upon the incidence of energetic neutral atoms. For ion beam bombardments, these densification and crystallization phenomena have not been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 265
Copyright
Copyright © Materials Research Society 1993

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References

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