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Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

Published online by Cambridge University Press:  15 February 2011

T. Kretz ,
D. Pribat ,
P. Legagneux ,
F. Plais ,
O. Huet  and
M. Magis
T. Kretz
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
D. Pribat
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
P. Legagneux
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
F. Plais
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
O. Huet
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
M. Magis
Affiliation:
Thomson-CSF LCR, 91404 Orsay Cedex, France
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Abstract

High purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 123
Copyright
Copyright © Materials Research Society 1994

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