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Deuteron Magnetic Resonance Studies of Structure and Photo-Induced Metastable Rearrangements in Deuterated Amorphous Si, Ge and SiGe Films

Published online by Cambridge University Press:  21 February 2011

R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
J. Bodart
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
R. Corey
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
W. Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. A. Turner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D. Pang
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
A. Wetsel
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

The spin dynamics of deuteron magnetic resonance (DMR) components have been studied in deuterated plasma-deposited thin films of a-Si, Ge and SiGe. Transient recoveries of perturbed deuteron magnetization components evolve via magnetization transport in the limit of large inhomogeneity. The evolution is well-described by an error function expression whose parameters correlate with the film photovoltaic quality as measured by the photoresponse ημτ and the photosensitivity, ΔI/Id. These relaxation results are correlated with our continuing DMR measurements of reversible metastable photo-induced rearrangements in high-quality a-Si:D,H films. These studies indicate that about 0.5% of the hydrogens interact with a light-induced defect.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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