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Development of A 4H-SiC CMOS Inverter

Published online by Cambridge University Press:  01 February 2011

Brett Adam Hull ,
Sei-Hyung Ryu ,
Husna Fatima ,
Jim Richmond ,
John W. Palmour  and
James Scofield
Brett Adam Hull
Affiliation:
brett_hull@cree.com, Cree, Inc., Power Device R&D, 4600 Silicon Dr., Durham, NC, 27703, United States, 919-313-5440, 919-313-5696
Sei-Hyung Ryu
Affiliation:
sei-hyung_ryu@cree.com, Cree, Inc., Durham, NC, 27703, United States
Husna Fatima
Affiliation:
fatima_husna@cree.com, Cree, Inc., Durham, NC, 27703, United States
Jim Richmond
Affiliation:
jim_richmond@cree.com, Cree, Inc., Durham, NC, 27703, United States
John W. Palmour
Affiliation:
john_palmour@cree.com, Cree, Inc., Durham, NC, 27703, United States
James Scofield
Affiliation:
james.scofield@wpafb.af.mil, Air Force Research Laboratory, Wright-Patterson AFB, OH, 45433, United States
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Abstract

In this paper we report the first 4H-SiC CMOS inverter, which was designed to be integrated in the process flow of a 4H-SiC power DMOSFET. The channels of both of the n channel and p-channel MOSFETs of the inverter were 50 um wide by 3 um long. NMOSFET threshold voltage (VTH) ranged from 4.4 V at 25°C to 2.2 V at 250°C and PMOSFET VTH ranged from -4.75 V at 25°C to just under -4 V at 300°C. The transfer threshold voltage (Vm) of the 4H-SiC CMOS inverter was in a very tight range of 2.8 V to 2.9 V over the entire temperature range of 25°C to 300°C when using a drive voltage (VDD) of 10 V.

Keywords

microelectronicsdevicessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B13-02
Copyright
Copyright © Materials Research Society 2006

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References

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